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BGA619 Datasheet

  • BGA619

  • The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in...

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Application Note No. 081
Discrete Semiconductors
The BGA619 Silicon-Germanium High IP3 Low Noise
Amplifier in PCS Receiver Applications
Features
鈥?Easy-to-use LNA MMIC in 70 GHz f
t
SiGe technology
鈥?Tiny 鈥濭reen鈥?P-TSLP-7-1 package (no Lead or Halogen
compounds)
鈥?Low external component count
鈥?Integrated output DC blocking capacitor, integrated RF
choke on internal bias network
鈥?Three gain steps
鈥?Power off function
鈥?High IP3 in all modes
Applications
鈥?Low Noise Amplifier for 1900 MHz PCS wireless frontends (CDMA 2000).
Introduction
The BGA619 is an easy-to-use, low-cost
Low Noise Amplifier (LNA) MMIC
designed
for use in today鈥檚 PCS systems which require excellent linearity in each of several gain
step modes. Based on Infineon鈥檚 cost-effective 70 GHz f
T
Silicon-Germanium (SiGe)
B7HF bipolar process technology, the BGA619 offers a 1.5 dB noise figure and 14.9 dB
of gain at 1.96 GHz with a current consumption of 6.5 mA in high gain mode. BGA619
offers impressive IIP3 performance of 7 dBm in High Gain mode, particularly for a three-
gain step, low-cost, integrated MMIC.
The new LNA incorporates a 50
鈩?/div>
pre-matched output with an integrated output DC
blocking capacitor. The input is pre-matched, requiring an external DC blocking
capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke
on the voltage supply pin. The operating mode of the device is determined by the voltage
at the GS-pin. An integrated on/off feature provides for low power consumption and
increased stand by time for PCS cellular handsets.
6
5
4
7
1
2
3
P-TSLP-7-1
AN081
1
2004-04-19

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