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BGA 427

Si-MMIC-Amplifier

in SIEGET

廬

25-Technologie

Preliminary data

鈥?/div>

Cascadable 50

鈩?gain

block

鈥?/div>

Unconditionally stable

鈥?/div>

Gain |S

21

|

2

= 18,5 dB at 1.8 GHz (appl.1)

gain |S

21

|

2

= 22 dB at 1.8 GHz (appl.2)

IP

3out

= +7 dBm at 1.8 GHz (V

D

=3V,

I

D

=9.4mA)

鈥?/div>

Noise figure

NF

= 2.2 dB at 1.8 GHz

鈥?/div>

typical device voltage

V

D

= 2 V to 5 V

鈥?/div>

Reverse isolation < 35 dB (appl.2)

4

3

4

2

1

VPS05605

3

+

V

OUT

Circuit Diagram

IN

1

2

GND

EHA07378

ESD: Electrostatic discharge

sensitive device, observe handling precaution!

Type

BGA 427

Parameter

Marking Ordering Code

BMs

Q62702-G0067

Pin Configuration

1, IN

2, GND

Symbol

Package

3, +V

4, Out

Value

25

6

150

-10

150

-65 ...+150

SOT-343

Unit

mA

V

mW

dBm

擄C

Maximum Ratings

Device current

Device voltage

Total power dissipation,

T

S

鈮?/div>

tbd 擄C

I

D

V

D

,+V

P

tot

P

RFin

T

j

T

A

T

stg

1)

R

F

input power

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point

R

thJS

鈮?/div>

tbd

K/W

1)

T

S

is measured on the emitter (GND) lead at the soldering point to the pcb

Semiconductor Group

1

Au

1998-11-01

-11-1998

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