BDX67
BDX67A
BDX67B
BDX67C
MECHANICAL DATA
Dimensions in mm
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
16.9
10.9
12.8
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
TO3 Package.
Case connected to collector.
ABSOLUTE MAXIMUM RATINGS
(T
case
=25擄C unless otherwise stated)
BDX BDX BDX BDX
67 67A 67B 67C
60
80 100 120 V
80
矛
茂
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
stj
R
th j-mb
Semelab plc.
Collector - emitter voltage (open base)
Collector - base voltage (open emitter)
Emitter - base voltage (open collector)
Collector current
Collector current (peak)
Base current
Total power dissipation at T
mb
= 25擄C
Maximum junction temperature
Storage junction temperature
Thermal resistance, junction to mounting base.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
100
茂
茂
茂
鉚
120
茂
茂
茂
140
茂
卯
V
V
A
A
mA
W
擄C
擄C
K/ W
5
5
5
5
16
20
250
150
200
-65 to +200
1.17
7/99
1
2
