BDX 66, A, B, C
PNP SILICON DARLINGTONS
High current power darlingtons designed for power amplification and
switching applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Collector-Emitter Voltage
Ratings
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
BDX66
BDX66A
BDX66B
BDX66C
Value
-60
-80
-100
-120
-60
-80
-100
-120
-5.0
Unit
V
V
CBO
Collector-Base Voltage
V
V
EBO
Emitter-Base Voltage
V
I
C(RMS)
I
C
Collector Current
-16
A
-20
I
CM
I
B
Base Current
-0.25
A
P
T
Power Dissipation
@ T
C
= 25擄
150
Watts
W/擄C
T
J
T
S
Junction Temperature
Storage Temperature
-55 to +200
擄C
COMSET SEMICONDUCTORS
1/4