廬
BDX53F
BDX54F
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
1
2
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
T
he BDX53F is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration, mounted in Jedec TO-220 plastic
package. It is intented for use in power linear and
switching applications. The complementary PNP
type is BDX54F.
TO-220
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K鈩?/div>
R
2
Typ. = 150
鈩?/div>
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
鈮?/div>
25 C
Storage Temperature
o
Value
BDX53F
BDX54F
160
160
5
8
12
0.2
60
-65 to 150
150
Unit
V
V
V
A
A
A
W
o
o
C
C
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 2003
1/4
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