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BDX53BFP
SILICON POWER DARLINGTON TRANSISTOR
APPLICATIONS:
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
DESCRIPTION
The BDX53BFP is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in T0-220FP fully molded
isolated package. It is intented for use in hammer
drivers, audio amplifiers and other medium power
linear and switching applications.
3
1
2
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R
1
Typ. = 10 K鈩?/div>
R
2
Typ. = 150
鈩?/div>
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (repetitive)
Base Current
Total Dissipation at T
c
鈮?25
C
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
Storage Temperature
Max. Operating Junction Temperature
o
Value
80
80
5
8
12
0.2
29
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
o
C
o
C
February 2003
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