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BDX33B Datasheet

  • BDX33B

  • Darlington Complementary Silicon Power Transistors

  • 138.55KB

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDX33B/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
鈥?/div>
High DC Current Gain 鈥?hFE = 2500 (typ.) at IC = 4.0
鈥?/div>
Collector鈥揈mitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min.) 鈥?BDX33B, 34B
VCEO(sus) =
100 Vdc (min.) 鈥?BDX33C, 34C
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc 鈥?BDX33B, 33C/34B, 34C
鈥?/div>
Monolithic Construction with Build鈥揑n Base鈥揈mitter Shunt resistors
鈥?/div>
TO鈥?20AB Compact Package
MAXIMUM RATINGS
BDX33B
BDX33C*
BDX34B
*
BDX34C
*Motorola Preferred Device
NPN
PNP
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
10
15
Collector Current 鈥?Continuous
Peak
Base Current
0.25
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
70
0.56
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
鈥?65 to + 150
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 鈥?100 VOLTS
70 WATTS
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 221A鈥?6
TO鈥?20AB
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.78
_
C/W
80
60
40
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (擄C)
140
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

BDX33B 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN - 達(dá)林頓

  • 10A

  • 80V

  • 2.5V @ 6mA，3A

  • 500µA

  • 750 @ 3A，3V

  • 70W

  • -

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • BDX33BOS

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