鈥?/div>
h
FE
= 2500 (typ.) at I
C
= 4.0
Collector鈥揈mitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min.) 鈥?BDX33B, 34B
100 Vdc (min.) 鈥?BDX33C, 34C
Low Collector鈥揈mitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max.) at I
C
= 3.0 Adc 鈥?BDX33B,
33C/34B, 34C
Monolithic Construction with Build鈥揑n Base鈥揈mitter Shunt resistors
TO鈥?20AB Compact Package
DARLINGTON
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80鈥?00 VOLTS
70 WATTS
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
10
15
Collector Current 鈥?Continuous
Peak
Base Current
0.25
Total Device Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
70
0.56
Watts
W/_C
_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?5 to +150
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.78
_C/W
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
BDX33B/D