BDW94CF PNP Epitaxial Silicon Transistor
July 2005
BDW94CF
PNP Epitaxial Silicon Transistor
Power Linear and Switching Application
鈥?Power Darlington TR
鈥?Complement to BDW93CF Respectively
1
TO-220F
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse) *
Base Current
T
a
= 25擄C unless otherwise noted
Parameter
Value
-100
-100
-12
-15
-0.2
30
150
-65 ~ 150
Units
V
V
A
A
A
W
擄C
擄C
Collector Dissipation (T
C
= 25擄C)
Junction Temperature
Storage Temperature
T
C
= 25擄C unless otherwise noted
Electrical Characteristics
Symbol
V
CEO(sus)
I
CBO
I
CEO
I
EBO
h
FE
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain *
Conditions
I
C
-100mA, I
B
= 0
V
CB
= -100V, I
E
= 0
VV
CE
= -100V, I
B
= 0
V
EB
= -5V, I
C
= 0
V
CE
= -3V, I
C
= -3A
V
CE
= -3V, I
C
= -5A
V
CE
= -3V, I
C
= -10A
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
C
= -5A, I
B
= -20mA
I
C
= -10A, I
B
= -100mA
I
F
= -5A
I
F
= -10A
Min.
-100
Typ.
Max
-100
-1
-2
Units
V
碌A(chǔ)
mA
mA
1000
750
100
20000
-2
-3
-2.5
-4
-1.3
-1.8
-2
-4
V
V
V
V
V
V
V
CE(sat)
V
BE(sat)
V
F
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Parallel Diode Forward Voltage *
* Pulse Test: PW = 300碌s, Duty Cycle = 1.5% Pulsed
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
BDW94CF Rev. A