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BDW93CF

BDW93CF

Hammer Drivers,

Audio Amplifiers Applications

鈥?Power Darlington TR

鈥?Complement to BDW94CF respectively

1

TO-220F

2.Collector

3.Emitter

1.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

Value

100

100

12

15

0.2

30

150

- 65 ~ 150

Units

V

V

A

A

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

BV

CEO

(sus)

I

CBO

I

CEO

I

EBO

h

FE

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

I

C

= 100mA, I

B

= 0

V

CB

= 100V, I

E

= 0

V

CE

= 100V, I

B

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 3V, I

C

= 3A

V

CE

= 3V, I

C

= 5A

V

CE

= 3V, I

C

= 10A

I

C

= 5A, I

B

= 20mA

I

C

= 10A, I

B

= 100mA

I

C

= 5A, I

B

= 20mA

I

C

= 10A, I

B

= 100mA

I

F

= 5A

I

F

= 10A

1.3

1.8

1000

750

100

Min.

100

Typ.

Max.

100

1

2

20000

2

3

2.5

4

2

4

V

V

V

V

V

V

Units

V

碌A(chǔ)

mA

mA

V

CE

(sat)

V

BE

(sat)

V

F

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

* Parallel Diode Forward Voltage

* Pulse Test: PW=300碌s, duty Cycle =1.5% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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