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BDW46 Datasheet

  • BDW46

  • Darlington Complementary Silicon Power Transistors

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDW42/D
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching applications.
鈥?/div>
High DC Current Gain 鈥?hFE = 2500 (typ.) @ IC = 5.0 Adc.
鈥?/div>
Collector Emitter Sustaining Voltage @ 30 mAdc:
VCEO(sus) = 80 Vdc (min.) 鈥?BDW46
VCEO(sus) =
100 Vdc (min.) 鈥?BDW42/BDW47
鈥?/div>
Low Collector Emitter Saturation Voltage
VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc
VCE(sat) =
3.0 Vdc (max.) @ IC = 10.0 Adc
鈥?/div>
Monolithic Construction with Built鈥揑n Base Emitter Shunt resistors
鈥?/div>
TO鈥?20AB Compact Package
MAXIMUM RATINGS
BDW42*
BDW46
BDW47*
*Motorola Preferred Device
NPN
PNP
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 鈥?100 VOLTS
85 WATTS
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCB
VEB
IC
IB
BDW46
80
80
BDW42
BDW47
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
15
Collector Current 鈥?Continuous
Base Current
0.5
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
85
0.68
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
鈥?55 to + 150
_
C
CASE 221A鈥?6
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.47
_
C/W
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (擄C)
Figure 1. Power Temperature Derating Curve
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
3鈥?12
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data

BDW46 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP - 達(dá)林頓

  • 15A

  • 80V

  • 3V @ 50mA，10A

  • 2mA

  • 1000 @ 5A，4V

  • 85W

  • 4MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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