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BDW42BG Datasheet

  • BDW42BG

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BDW42* 鈭?NPN, BDW46,
BDW47* 鈭?PNP
Preferred Device
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium鈭抪ower silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
http://onsemi.com
鈥?/div>
Pb鈭扚ree Package is Available**
鈥?/div>
High DC Current Gain 鈭?h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
鈥?/div>
Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min) 鈭?BDW46
100 Vdc (min.) 鈭?BDW42/BDW47
鈥?/div>
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
鈥?/div>
Monolithic Construction with Built鈭捍n Base Emitter Shunt resistors
鈥?/div>
TO鈭?20AB Compact Package
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BDW46
BDW42, BDW47
Collector-Base Voltage
BDW46
BDW42, BDW47
Emitter-Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
V
EB
I
C
I
B
P
D
85
0.68
T
J
, T
stg
鈭?5 to
+150
W
W/擄C
擄C
V
CB
80
100
5.0
15
0.5
Vdc
Adc
Adc
Symbol
V
CEO
80
100
Vdc
Value
Unit
Vdc
1
15 A DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80鈭?00 V, 85 W
MARKING
DIAGRAM
4
TO鈭?20AB
CASE 221A
STYLE 1
BDWxx
YYWW
2
3
xx = 42, 46 or 47
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
BDW42
BDW46
BDW47
BDW47G
Package
TO鈭?20AB
TO鈭?20AB
TO鈭?20AB
TO鈭?20AB
(Pb鈭扚ree)
Shipping
鈥?/div>
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction鈭抰o鈭扖ase
Symbol
R
qJC
Max
1.47
Unit
擄C/W
鈥燜or information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Preferred
devices are ON Semiconductor recommended
choices for future use and best overall value
**For additional information on our Pb鈭扚ree strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
漏
Semiconductor Components Industries, LLC, 2004
June, 2004 鈭?Rev. 11
Publication Order Number:
BDW42/D

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  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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    Darlington Complementary Silicon Power Transistors
    ONSEMI
  • 英文版
    Darlington Complementary Silicon Power Transistors
    MOTOROLA
  • 英文版
    Dated : 17/09/2016 Rev: 01 TOP DYNAMIC BDW42 NPN Silic...
    TD
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    ONSEMI [ON...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    Darlington Complementary Silicon Power Transistors
    MOTOROLA [...
  • 英文版
    Darlington Complementary Silicon Power Transistors
    ONSEMI [ON...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    MOTOROLA [...
  • 英文版
    Darlington Complementary Silicon Power Transistors
    MOTOROLA
  • 英文版
    Darlington Complementary Silicon Power Transistors
    ONSEMI
  • 英文版
    DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
    ONSEMI [ON...

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