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BDW42/D Datasheet

  • BDW42/D

  • Darlington Complementary Silicon Power Transistors

  • 8頁

  • ETC

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ON Semiconductort
NPN
PNP
Darlington Complementary
Silicon Power Transistors
. . . designed for general purpose and low speed switching
applications.
BDW42 *
BDW46
BDW47 *
*ON Semiconductor Preferred Device
鈥?/div>
High DC Current Gain 鈥?h
FE
= 2500 (typ.) @ I
C
= 5.0 Adc.
鈥?/div>
Collector Emitter Sustaining Voltage @ 30 mAdc:
V
CEO(sus)
= 80 Vdc (min.) 鈥?BDW46
100 Vdc (min.) 鈥?BDW42/BDW47
鈥?/div>
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max.) @ I
C
= 5.0 Adc
3.0 Vdc (max.) @ I
C
= 10.0 Adc
鈥?/div>
Monolithic Construction with Built鈥揑n Base Emitter Shunt resistors
鈥?/div>
TO鈥?20AB Compact Package
MAXIMUM RATINGS
DARLINGTON
15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80鈥?00 VOLTS
85 WATTS
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
BDW46
80
80
BDW42
BDW47
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
15
Collector Current 鈥?Continuous
Base Current
0.5
Total Device Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
85
0.68
Watts
W/_C
_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?5 to +150
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.47
_C/W
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (擄C)
Figure 1. Power Temperature Derating Curve
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
BDW42/D

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