BDP951 ... BDP955
NPN Silicon AF Power Transistor
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP952 ... BDP956 (PNP)
Type
BDP951
BDP953
BDP955
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation
,
T
S
= 99 擄C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
4
3
2
1
VPS05163
Marking
Pin Configuration
Package
BDP 951
BDP 953
PDP 955
1=B
1=B
1=B
2=C
2=C
2=C
3=E
3=E
3=E
4=C
4=C
4=C
SOT223
SOT223
SOT223
Symbol
V
CEO
V
CBO
V
EBO
BDP 951 BDP 953 BDP 955
Unit
80
100
5
100
120
5
3
5
200
500
3
150
-65 ... 150
W
擄C
mA
120
140
5
A
V
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
17
K/W
1
Aug-06-2001