MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BDC05/D
One Watt
High Voltage Transistor
NPN Silicon
COLLECTOR
2
3
BASE
1
EMITTER
BDC05
MAXIMUM RATINGS
Rating
Collector 鈥?Emitter Voltage
Collector 鈥?Base Voltage
Emitter 鈥?Base Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
300
300
5.0
500
1.0
8.0
2.5
50
鈥?55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
Watts
mW/擄C
擄C
CASE 29鈥?5, STYLE 14
TO鈥?2 (TO鈥?26AE)
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
擄C/W
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector 鈥?Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector 鈥?Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter 鈥?Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
V(BR)CEO
300
V(BR)CBO
300
V(BR)EBO
5.0
ICBO
鈥?/div>
IEBO
鈥?/div>
10
0.01
碌Adc
鈥?/div>
碌Adc
鈥?/div>
Vdc
鈥?/div>
Vdc
Vdc
v
300
m
s; Duty Cycle
v
2.0%.
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
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