ON Semiconductort
One Watt Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
A
= 25擄C
Derate above 25擄C
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BDC01D
100
100
5.0
0.5
1.0
8.0
2.5
20
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
Watts
mW/擄C
擄C
BDC01D
1
2
3
CASE 29鈥?0, STYLE 14
TO鈥?2 (TO鈥?26AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
擄C/W
擄C/W
3
BASE
COLLECTOR
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symb
ol
Min
Max
Unit
1
EMITTER
OFF CHARACTERISTICS
Collector鈥揈mitter Voltage
(I
C
= 10 mA, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 V, I
E
= 0)
Emitter Cutoff Current
(I
C
= 0, V
EB
= 5.0 V)
V
(BR)C
EO
100
鈥?/div>
鈥?/div>
鈥?/div>
0.1
100
Vdc
mAdc
nAdc
I
CBO
I
EBO
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
Collector鈥揈mitter Saturation Voltage
(1)
(I
C
= 1000 mA, I
B
= 100 mA)
Collector鈥揈mitter On Voltage
(1)
(I
C
= 1000 mA, V
CE
= 1.0 V)
h
FE
40
25
V
CE(sat)
V
BE(on)
鈥?/div>
鈥?/div>
400
鈥?/div>
0.7
1.2
Vdc
Vdc
鈥?/div>
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
(I
C
= 200 mA, V
CE
= 5.0 V, f = 20 MHz)
Output Capacitance
(V
CB
= 10 V, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle 2.0%.
漏
Semiconductor Components Industries, LLC, 2001
f
T
C
ob
50
鈥?/div>
鈥?/div>
30
MHz
pF
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BDC01D/D
next
BDC01D/D相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
One Watt High Voltage Transistor
-
英文版
One Watt High Voltage Transistor
MOTOROLA [...
-
英文版
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 500MA I(C) | TO-226...
ETC
-
英文版
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-226...
ETC
-
英文版
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 500MA I(C) | TO-226...
ETC
-
英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
One Watt Amplifier Transistor
-
英文版
One Watt Amplifier Transistor(NPN Silicon)
ONSEMI
-
英文版
One Watt Amplifier Transistor(NPN Silicon)
ONSEMI [ON...
-
英文版
One Watt Amplifier Transistor
MOTOROLA [...
-
英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-226AE
ETC
-
英文版
One Watt Amplifier Transistor
-
英文版
One Watt Amplifier Transistor
MOTOROLA [...
-
英文版
One Watt Amplifier Transistor
ETC
-
英文版
One Watt Amplifier Transistor
-
英文版
500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTI...
ONSEMI