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BD810 Datasheet

  • BD810

  • POWER TRANSISTORS PNP SILICON

  • 8頁

  • ONSEMI

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上傳產(chǎn)品規(guī)格書

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ON Semiconductor
)
NPN
PNP
Plastic High Power Silicon
Transistor
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
BD809
BD810
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
鈥?/div>
DC Current Gain 鈥?/div>
hFE = 30 (Min) @ IC = 2.0 Adc
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCBO
VEBO
IC
IB
Value
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Base Current
5.0
10
6.0
Total Device Dissipation TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
PD
90
720
Watts
mW/_C
_C
TJ, Tstg
鈥?5 to +150
4
1
2
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
3
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
胃
JC
Max
Unit
Thermal Resistance, Junction to Case
1.39
_C/W
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 1
Publication Order Number:
BD809/D

BD810 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 10A

  • 80V

  • 1.1V @ 300mA，3A

  • -

  • 15 @ 4A，2V

  • 90W

  • 1.5MHz

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

BD810相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
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  • 英文版
    POWER TRANSISTORS PNP SILICON
    ONSEMI
  • 英文版
    POWER TRANSISTORS PNP SILICON
    ONSEMI [ON...
  • 英文版
    TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 2A I(C) | TO-202
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 2A I(C) | TO-202
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-202
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | TO-202
    ETC
  • 英文版
    TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-202
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