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BD809/D Datasheet

  • BD809/D

  • Plastic High Power Silicon Transistor

  • 8頁

  • ETC

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上傳產(chǎn)品規(guī)格書

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ON Semiconductort
NPN
PNP
Plastic High Power Silicon
Transistor
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
BD809
BD810
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
鈥?/div>
DC Current Gain 鈥?/div>
h
FE
= 30 (Min) @ I
C
= 2.0 Adc
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MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
Value
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Base Current
5.0
10
6.0
Total Device Dissipation T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
90
720
Watts
mW/_C
_C
T
J
, T
stg
鈥?5 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
JC
Max
Unit
Thermal Resistance, Junction to Case
1.39
_C/W
CASE 221A鈥?9
TO鈥?20AB
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 0
Publication Order Number:
BD809/D

BD809/D相關型號PDF文件下載

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    Plastic High Power Silicon PNP Transistor
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  • 英文版
    TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 10A I(C) | TO-220AB
    ETC
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    TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-220AB
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    POWER TRANSISTORS PNP SILICON
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