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鈥?/div>
DC Current Gain 鈥?hFE = 30 (Min) @ IC = 2.0 Adc
鈥?/div>
BD 808, 810 are complementary with BD 807, 890
* Pulse Test: Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
. . . designed for use in high power audio amplifiers utilizing complementary or quasi
complementary circuits.
Plastic High Power Silicon
PNP Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Current鈥揋ain Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Base鈥揈mitter On Voltage*
(IC = 4.0 Adc, VCE = 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(IC = 3.0 Adc, IB = 0.3 Adc)
DC Current Gain
(IC = 2.0 A, VCE = 2.0 V)
(IC = 4.0 A, VCE = 2.0 V)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 70 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Collector鈥揈mitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Characteristic
x
300
碌s,
Duty Cycle
x
2.0%.
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
PD
IC
IB
Symbol
胃
JC
BD808
BD810
BD808
BD810
Type
VCE(sat)
VBE(on)
Symbol
BVCEO
ICBO
IEBO
hFE
鈥?55 to + 150
fT
1.39
Max
Value
90
720
6.0
5.0
10
70
80
60
80
Watts
mW/
_
C
_
C/W
BD808
BD810
BD808
BD810
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
Type
_
C
Min
1.5
30
15
60
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
*Motorola Preferred Device
BD808
BD810*
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BD808/D
Max
1.6
1.1
2.0
1.0
1.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
next
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EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
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英文版
Plastic High Power Silicon PNP Transistor
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英文版
POWER TRANSISTORS PNP SILICON
ONSEMI
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英文版
POWER TRANSISTORS PNP SILICON
ONSEMI [ON...
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英文版
Plastic High Power Silicon PNP Transistor
MOTOROLA [...
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英文版
EPITAXIAL-BASE,SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
INTERSIL [...
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英文版
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 10A I(C) | TO-220AB
ETC
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英文版
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-220AB
ETC
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英文版
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AB
ETC
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英文版
Plastic High Power Silicon PNP Transistor
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英文版
Plastic High Power Silicon PNP Transistor
MOTOROLA [...
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英文版
POWER TRANSISTORS PNP SILICON
ONSEMI
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英文版
POWER TRANSISTORS PNP SILICON
ONSEMI [ON...