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Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
*Pulse Test: Pulse Width
x
300
碌s,
Duty Cycle
x
2.0%.
h
FE
= 30 (Min) @ I
C
= 2.0 Adc
鈥?/div>
BD 808, 810 are complementary with BD 807, 890
鈥?/div>
DC Current Gain 鈥?/div>
Plastic High Power Silicon
PNP Transistor
. . . designed for use in high power audio amplifiers utilizing
complementary or quasi complementary circuits.
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
January, 2001 鈥?Rev. 8
漏
Semiconductor Components Industries, LLC, 2001
Current鈥揋ain Bandwidth Product
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Base鈥揈mitter On Voltage*
(I
C
= 4.0 Adc, V
CE
= 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
DC Current Gain
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 4.0 A, V
CE
= 2.0 V)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 70 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
Collector鈥揈mitter Sustaining Voltage*
(I
C
= 0.1 Adc, I
B
= 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation T
C
= 25_C
Derate above 25_C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Characteristic
Symbol
T
J
, T
stg
V
CBO
V
CEO
V
EBO
P
D
I
C
I
B
Symbol
胃
JC
BD808
BD810
BD808
BD810
Type
Symbol
V
CE(sat)
V
BE(on)
BV
CEO
I
CBO
I
EBO
h
FE
f
T
1
鈥?5 to +150
1.39
Max
Value
90
720
6.0
5.0
10
70
80
60
80
BD808
BD810
BD808
BD810
Watts
mW/_C
Type
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
Min
1.5
30
15
60
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
*ON Semiconductor Preferred Device
10 AMPERE
POWER TRANSISTORS
PNP SILICON
60, 80 VOLTS
90 WATTS
Publication Order Number:
BD808/D
BD808
BD810 *
CASE 221A鈥?6
TO鈥?20AB
Max
1.6
1.1
2.0
1.0
1.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
next
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