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BD802/D Datasheet

  • BD802/D

  • Plastic High Power Silicon PNP Transistor

  • 4頁

  • ETC

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*Pulse Test: Pulse Width
x
300
碌s,
Duty Cycle
x
2.0.
h
FE
= 40 (Min) @ I
C
= 1.0 Adc
鈥?/div>
BD802 is complementary with BD 795, 797, 799, 801
鈥?/div>
DC Current Gain 鈥?/div>
Plastic High Power Silicon
PNP Transistor
. . . designed for use up to 30 Watt audio amplifiers utilizing
complementary or quasi complementary circuits.
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
ON Semiconductort
March, 2001 鈥?Rev. 9
漏
Semiconductor Components Industries, LLC, 2001
Current鈥揋ain 鈥?Bandwidth Product
(I
C
= 0.25 Adc, V
CE
= 10 Vdc,
f = MHz)
Base鈥揈mitter On Voltage*
(I
C
= 3.0 Adc, V
CE
= 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(I
C
= 3.0 Adc, I
B
= 0.3 Adc)
DC Current Gain
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 3.0 A, V
CE
= 2.0 V)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Collector鈥揈mitter Sustaining Voltage*
(I
C
= 0.05 Adc, I
B
= 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation T
C
= 25_C
Derate above 25_C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Characteristic
Symbol
T
J
, T
stg
Symbol
V
CBO
V
CEO
V
EBO
P
D
胃
JC
I
C
I
B
鈥?5 to +150
1
Value
65
522
100
100
3.0
8.0
5.0
1.92
Max
Symbol
V
CE(sat)
V
BE(on)
BV
CEO
I
CBO
I
EBO
h
FE
f
T
Watts
mW/_C
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C/W
_C
Unit
Min
100
3.0
30
15
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
8 AMPERE
POWER TRANSISTORS
PNP SILICON
100 VOLTS
65 WATTS
Publication Order Number:
BD802/D
BD802
Max
CASE 221A鈥?9
TO鈥?20AB
1.6
1.0
1.0
0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc

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