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BD791 Datasheet

  • BD791

  • POWER TRANSISTOR SILICON

  • 6頁

  • ONSEMI

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD791/D
NPN Plastic Silicon Power
Transistor
. . . designed for low power audio amplifier and low鈥揷urrent, high speed switching
applications.
鈥?/div>
High Collector鈥揈mitter Sustaining Voltage 鈥?/div>
VCEO(sus) = 100 Vdc (Min)
鈥?/div>
High DC Current Gain @ IC = 200 mAdc
hFE = 40鈥?50
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
鈥?/div>
High Current Gain 鈥?Bandwidth Product 鈥?/div>
fT = 40 MHz (Min) @ IC = 100 mAdc)
BD791
Motorola Preferred Device
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
TC
PD, POWER DISSIPATION (WATTS)
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*MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
Max
100
100
6.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
VEBO
IC
IB
Collector Current 鈥?Continuous
鈥?Peak
Base Current
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
PD
15
0.12
Watts
W/
_
C
TJ,Tstg
鈥?65 to + 150
CASE 77鈥?9
TO鈥?25AA TYPE
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
16
8.34
_
C/W
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
80
100
120
T, TEMPERATURE (擄C)
140
0
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1

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