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BD791/D Datasheet

  • BD791/D

  • NPN Plastic Silicon Power Transistor

  • 63.82KB

  • 8頁

  • ETC

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ON Semiconductort
NPN Plastic Silicon Power
Transistor
. . . designed for low power audio amplifier and low鈥揷urrent, high
speed switching applications.
BD791
ON Semiconductor Preferred Device
鈥?/div>
High Collector鈥揈mitter Sustaining Voltage 鈥?/div>
V
CEO(sus)
= 100 Vdc (Min)
鈥?/div>
High DC Current Gain @ I
C
= 200 mAdc
h
FE
= 40鈥?50
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
V
CE(sat)
= 0.5 Vdc (Max) @ I
C
= 500 mAdc
鈥?/div>
High Current Gain 鈥?Bandwidth Product 鈥?/div>
f
T
= 40 MHz (Min) @ I
C
= 100 mAdc)
4 AMPERE
POWER TRANSISTOR
SILICON
100 VOLTS
15 WATTS
TC
PD, POWER DISSIPATION (WATTS)
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*MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
Max
100
100
6.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
V
EBO
I
C
I
B
Collector Current 鈥?Continuous
鈥?Peak
Base Current
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
P
D
15
0.12
Watts
W/_C
_C
T
J
,T
stg
鈥?5 to +150
CASE 77鈥?9
TO鈥?25AA TYPE
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
16
8.34
_C/W
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
100
120
80
T, TEMPERATURE (擄C)
140
0
160
Figure 1. Power Derating
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 2
Publication Order Number:
BD791/D

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