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BD789 Datasheet

  • BD789

  • Complementary Plastic Silicon Power Transistors

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD789/D
Complementary Plastic Silicon
Power Transistors
. . . designed for low power audio amplifier and low鈥揷urrent, high speed switching
applications.
鈥?/div>
High Collector鈥揈mitter Sustaining Voltage 鈥?/div>
VCEO(sus) = 80 Vdc (Min) 鈥?BD789, BD790
VCEO(sus)
= 100 Vdc (Min) 鈥?BD791, BD792
鈥?/div>
High DC Current Gain @ IC = 200 mAdc
hFE = 40鈥?50
鈥?/div>
Low Collector鈥揈mitter Saturation Voltage 鈥?/div>
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
鈥?/div>
High Current Gain 鈥?Bandwidth Product 鈥?/div>
fT = 40 MHz (Min) @ IC = 100 mAdc)
*MAXIMUM RATINGS
Rating
BD789
BD791*
PNP
BD790
BD792*
*Motorola Preferred Device
NPN
4 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
15 WATTS
TC
PD, POWER DISSIPATION (WATTS)
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Symbol
VCEO
VCB
BD789
BD790
80
80
BD791
BD792
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
VEBO
IC
IB
6.0
4.0
8.0
1.0
Collector Current 鈥?Continuous
鈥?Peak
Base Current
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
PD
15
0.12
Watts
W/
_
C
TJ,Tstg
鈥?65 to + 150
CASE 77鈥?8
TO鈥?25AA TYPE
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
16
8.34
_
C/W
1.6
TA
PD, POWER DISSIPATION (WATTS)
12
1.2
8.0
0.8
4.0
0.4
0
20
40
60
100
120
80
T, TEMPERATURE (擄C)
140
0
160
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 7
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

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