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BD776 Datasheet

  • BD776

  • DARLINGTON 4-AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS ...

  • 120.35KB

  • 4頁

  • ONSEMI

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TA
PD, POWER DISSIPATION (WATTS)
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鈥?/div>
High DC Current Gain
hFE = 1400 (Typ) @ IC = 2.0 Adc
鈥?/div>
Collector鈥揈mitter Sustaining Voltage 鈥?@ 10 mAdc
VCEO(sus) = 45 Vdc (Min) 鈥?BD776
VCEO(sus)
= 60 Vdc (Min) 鈥?BD777, 778
VCEO(sus)
= 80 Vdc (Min) 鈥?BD780
鈥?/div>
Reverse Voltage Protection Diode
鈥?/div>
Monolithic Construction with Built鈥搃n Base鈥揈mitter output Resistor
. . . designed for general purpose amplifier and high鈥搒peed switching applications.
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation
TC = 25
_
C 鈥?Derate above 25
_
C
Base Current
Collector Current 鈥?/div>
Continuous Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristics
Rating
16
Symbol
TJ, Tstg
VCEO
VCB
VEB
IC
IB
PD
Symbol
R
胃JC
R
胃JA
BD776
45
45
鈥?65 to + 150
BD777
BD778
15
0.12
100
4.0
6.0
5.0
60
60
83.3
8.34
Max
BD780
80
80
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Preferred
devices are Motorola recommended choices for future use and best overall value.
Plastic Darlington
Complementary Silicon Power
Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
PD, POWER DISSIPATION (WATTS)
4.0
8.0
12
0
20
40
Figure 1. Power Derating
60
T, TEMPERATURE (擄C)
80
100
120
_
C/W
_
C/W
mAdc
Watts
W/
_
C
Unit
Unit
Adc
Vdc
Vdc
Vdc
140
_
C
0
160
0.4
0.8
1.2
1.6
DARLINGTON
4鈥揂MPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
45, 60, 80 VOLTS
15 WATTS
*Motorola Preferred Device
CASE 77鈥?8
TO鈥?25AA TYPE
BD777
PNP
BD776
BD778
BD780 *
Order this document
by BD777/D
NPN
1

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