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BD676A Datasheet

  • BD676A

  • DARLINGTON POWER TRANSISTORS PNP SILICON

  • 4頁

  • ONSEMI

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鈥?/div>
High DC Current Gain 鈥?/div>
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
鈥?/div>
Monolithic Construction
鈥?/div>
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,
677, 677A, 679, 679A, 681
鈥?/div>
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
. . . for use as output devices in complementary general鈥損urpose amplifier applica-
tions.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Silicon PNP Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATING
REV 7
Operating and Storage Junction
Temperating Range
Total Device Dissipation
@ TC = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Thermal Resistance, Junction to Case
Rating
Characteristic
Symbol
TJ, Tstg
VCEO
VCB
VEB
PD
IC
IB
5.0
PD, POWER DISSIPATION (WATTS)
10
40
50
15
20
25
30
35
45
0
15
BD676
BD676A
30
Figure 1. Power Temperature Derating
45
45
45
Symbol
胃
JC
BD678
BD678A
60
TC, CASE TEMPERATURE (擄C)
鈥?55 to + 150
60
60
40
0.32
75
0.1
4.0
5.0
BD680
BD680A
90
80
80
3.13
Max
105
BD682
100
100
120
135
_
C/W
Watts
W/
_
C
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
150
165
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
CASE 77鈥?8
TO鈥?25AA TYPE
Order this document
by BD676/D
1

BD676A 產(chǎn)品屬性

  • 500

  • 分離式半導體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP - 達林頓

  • 4A

  • 45V

  • 2.8V @ 40mA，2A

  • 500µA

  • 750 @ 2A，3V

  • 40W

  • -

  • 通孔

  • TO-225AA，TO-126-3

  • TO225AA

  • 散裝

BD676A相關(guān)型號PDF文件下載

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