BD533/535/537
BD533/535/537
Medium Power Linear and Switching
Applications
鈥?Low Saturation Voltage
鈥?Complement to BD534, BD536 and BD538 respectively
1
TO-220
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
: BD533
: BD535
: BD537
1.Base
Value
45
60
80
45
60
80
45
60
80
5
8
1
50
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
V
V
V
A
A
W
擄C
擄C
V
CES
Collector-Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
I
CBO
Parameter
Collector Cut-off Current : BD533
: BD535
: BD537
Collector Cut-off Current : BD533
: BD535
: BD537
Emitter Cut-off Current
* DC Current Gain
: BD533/535
: BD537
: ALL DEVICE
: BD533/535
: BD537
: ALL DEVICE
: ALL DEVICE
Test Condition
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 45V, V
BE
= 0
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CE
= 2V, I
C
= 500mA
V
CE
= 2V, I
C
= 2A
20
15
40
25
15
30
15
40
20
0.8
1.5
3
12
75
100
0.8
V
V
V
MHz
Min.
Typ.
Max.
100
100
100
100
100
100
1
Units
碌A
碌A
碌A
碌A
碌A
碌A
mA
I
CES
I
EBO
h
FE
h
FE
h
FE
Groups
J
K
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 3A
I
C
= 2A, I
B
= 0.2A
I
C
= 6A, I
B
= 0.6A
V
CE
= 2V, I
C
= 2A
V
CE
= 1V, I
C
= 500mA
V
CE
(sat)
V
BE
(on)
f
T
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Current Gain Bandwidth Product
* Pulse Test: PW =300碌s, duty Cycle =1.5% Pulsed
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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