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BD534/536/538

BD534/536/538

Medium Power Linear and Switching

Applications

鈥?Low Saturation Voltage

鈥?Complement to BD533, BD535 and BD537 respectively

1

TO-220

2.Collector

3.Emitter

1.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Collector-Base Voltage

Parameter

: BD534

: BD536

: BD538

: BD534

: BD536

: BD538

Value

- 45

- 60

- 80

- 45

- 60

- 80

-5

-8

-1

50

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

A

A

W

擄C

擄C

V

CEO

Collector-Emitter Voltage

V

EBO

I

C

I

B

P

C

T

J

T

STG

Emitter-Base Voltage

Collector Current (DC)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

I

CBO

Parameter

Collector Cut-off Current

: BD534

: BD536

: BD538

: BD534

: BD536

: BD538

Test Condition

V

CB

= - 45V, I

E

= 0

V

CB

= - 60V, I

E

= 0

V

CB

= - 80V, I

E

= 0

V

CE

= - 45V, V

BE

= 0

V

CE

= - 60V, V

BE

= 0

V

CE

= - 80V, V

BE

= 0

V

EB

= - 5V, I

C

= 0

V

CE

= -2 V, I

C

= - 500mA

V

CE

= - 5V, I

C

= - 10mA

V

CE

= - 2V, I

C

= - 2A

40

20

15

25

15

30

15

40

20

- 0.8

- 1.5

3

12

75

100

- 0.8

V

V

V

MHz

Min.

Typ.

Max.

- 100

- 100

- 100

- 100

- 100

- 100

-1

Units

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

mA

I

CES

Collector Cut-off Current

I

EBO

h

FE

Emitter Cut-off Current

* DC Current Gain

: ALL DEVICE

: BD534/536

: BD538

: BD534/536

: BD538

: ALL DEVICE

: ALL DEVICE

h

FE

h

FE

Groups

J

K

V

CE

= - 2V, I

C

= - 2A

V

CE

= - 2V, I

C

= - 3A

V

CE

= -2V, I

C

= - 2A

V

CE

= - 2V, I

C

= - 3A

I

C

= - 2A, I

B

= - 0.2A

I

C

= - 6A, I

B

= - 0.6A

V

CE

= - 2V, I

C

= - 2A

V

CE

= - 1V, I

C

= - 500mA

V

CE

(sat)

V

BE

(on)

f

T

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

Current Gain Bandwidth Product

* Pulse Test: PW =300碌s, duty Cycle =1.5% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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