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BD439/441

BD439/441

Medium Power Linear and Switching

Applications

鈥?Complement to BD440, BD442 respectively

1

TO-126

2.Collector

3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Collector-Base Voltage

: BD439

: BD441

V

CES

Collector-Emitter Voltage

: BD439

: BD441

Collector-Emitter Voltage

: BD439

: BD441

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

Parameter

1. Emitter

Value

60

80

60

80

60

80

5

4

7

1

36

150

- 65 ~ 150

Units

V

V

V

V

V

V

V

A

A

A

W

擄C

擄C

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

* Collector-Emitter Sustaining Voltage

: BD439

: BD441

Collector Cut-off Current

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

: BD439

: BD441

: BD439

: BD441

: BD439

: BD441

: BD439

: BD441

: BD439

: BD441

Test Condition

I

C

= 100mA, I

B

= 0

V

CB

= 60V, I

E

= 0

V

CB

= 80V, I

E

= 0

V

CE

= 60V, V

BE

= 0

V

CE

= 80V, V

BE

= 0

V

EB

= 5V, I

C

= 0

V

CE

= 5V, I

C

= 10mA

V

CE

=1V, I

C

= 500mA

V

CE

= 1V, I

C

= 2A

I

C

= 2A, I

B

= 0.2A

V

CE

= 5V, I

C

= 10mA

V

CE

= 1V, I

C

= 2A

V

CE

= 1V, I

C

= 250mA

3

0.58

1.5

20

15

40

40

25

15

130

130

140

140

Min.

60

80

100

100

100

100

1

Typ.

Max.

Units

V

V

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

碌A(chǔ)

mA

I

CBO

I

CES

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

f

T

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

Current Gain Bandwidth Product

0.8

V

V

V

MHz

* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulsed

漏2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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