Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN EPITAXIAL SILICON POWER TRANSISTOR
BD410
TO-126
Plastic Package
EC
B
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Peak Collector Current
Total Power Dissipation @ Ta=25 潞C
@ Tc=25 潞C
Storage Temperature Range
Lead Temperature 1.6mm from Case for
10 Seconds.
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j,
T
stg
T
L
VALUE
500
325
5.0
1.0
1.5
1.25
20
- 55 to +125
260
UNIT
V
V
V
A
W
潞C
潞C
ELECTRICAL CHARACTERISTICS (Ta=25潞C unless otherwise specified )
DESCRIPTION
Collector Cut off Current
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
SYMBOL
I
CES
V
CBO
V
CEO *
V
EBO
h
FE
TEST CONDITION
V
CE
=300V,
IB
=0
I
C
=500碌A(chǔ), I
E
=0
I
C
=10mA, I
B
=0
I
E
=50碌A(chǔ), I
C
=0
I
C
=5mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
MIN
500
325
5
25
30
20
TYP
MAX
100
UNIT
碌A(chǔ)
V
V
V
240
1.5
0.5
V
V
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Dynamic Characteristics
DESCRIPTION
Output Capacitance
Input Capacitance
*Pulsed Test tp=300碌s,Duty Cycle<2%
V
BE (Sat)
V
CE (Sat)
SYMBOL
TEST CONDITION
C
obo
I
E
=0, V
CB
=10V, f=1MHz
C
ibo
I
E
=0, V
EB
=0.5V, f=1MHz
MIN
TYP
5.5
90
MAX
UNIT
pF
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
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