BD376/378/380
BD376/378/380
Medium Power Linear and Switching
Applications
鈥?Complement to BD375, BD377 and BD379 respectively
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Voltage : BD376
: BD378
: BD380
Collector-Emitter Voltage : BD376
: BD378
: BD380
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
1
TO-126
2.Collector
3.Base
1. Emitter
Value
- 50
- 75
- 100
- 45
- 60
- 80
-5
-2
-3
-1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
*Collector-Emitter Sustaining Voltage
: BD376
: BD378
: BD380
Collector-Base
Breakdown Voltage
Collector Cut-off Current
: BD376
: BD378
: BD380
: BD376
: BD378
: BD380
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 50
- 75
- 100
-2
-2
-2
- 100
40
20
375
-1
- 1.5
50
500
V
V
ns
ns
Typ.
Max.
Units
V
V
V
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
BV
CBO
I
C
= - 100碌A(chǔ), I
E
= 0
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 0.15A
V
CE
= - 2V, I
C
= - 1A
I
C
= - 1A, I
B
= - 0.1A
V
CE
= - 2V, I
C
= -1A
V
CC
= - 30V, I
C
= - 0.5A
I
B1
= - I
B2
= - 0.05A
R
L
= 60鈩?/div>
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
t
ON
t
OFF
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350碌s, duty Cycle=2% Pulsed
h
FE
Classificntion
Classification
h
FE1
漏2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
Rev. A, February 2000
1
2
3
4
