BD375/377/379
BD375/377/379
Medium Power Linear and Switching
Applications
鈥?Complement to BD376, BD378 and BD380 respectively
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: BD375
: BD377
: BD379
1
TO-126
2.Collector
3.Base
1. Emitter
Value
50
75
100
45
60
80
5
2
3
1
25
150
- 55 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
V
CEO
Collector-Emitter Voltage : BD375
: BD377
: BD379
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD375
: BD377
: BD379
Collector-Base
Breakdown Voltage
Collector Cut-off Current
: BD375
: BD377
: BD379
: BD375
: BD377
: BD379
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
50
75
100
2
2
2
100
40
20
375
1
1.5
50
500
V
V
ns
ns
Typ.
Max.
Units
V
V
V
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
BV
CBO
I
C
= 100碌A(chǔ), I
E
= 0
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 0.15A
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
V
CC
= 30V, I
C
= 0.5A
I
B1
= - I
B2
= 0.05A
R
L
= 60鈩?/div>
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
t
ON
t
OFF
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
Turn ON Time
Turn OFF Time
* Pulse Test: PW=350碌s, duty Cycle=2% Pulsed
h
FE
Classification
Classification
h
FE1
漏2000 Fairchild Semiconductor International
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
25
150 ~ 375
Rev. A, February 2000
1
2
3
4
