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BD244/A/B/C

BD244/A/B/C

Medium Power Linear and Switching

Applications

鈥?Complement to BD243, BD243A, BD243B and BD243C respectively

1

TO-220

2.Collector

3.Emitter

1.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

Collector-Base Voltage

: BD244

: BD244A

: BD244B

: BD244C

V

CEO

Collector-Emitter Voltage

: BD244

: BD244A

: BD244B

: BD244C

Emitter-Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

Base Current

Collector Dissipation (T

C

=25擄C)

Junction Temperature

Storage Temperature

- 45

- 60

- 80

- 100

- 45

- 60

- 80

- 100

-5

-6

- 10

-2

65

150

- 65 ~ 150

V

V

V

V

V

V

V

V

V

A

A

A

W

擄C

擄C

Parameter

Value

Units

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

V

CEO

(sus)

Parameter

* Collector-Emitter Sustaining Voltage

: BD244

: BD244A

: BD244B

: BD244C

Collector Cut-off Current

Collector Cut-off Current

: BD244/244A

: BD244B/244C

: BD244

: BD244A

: BD244B

: BD244C

Test Condition

I

C

= - 30mA, I

B

= 0

Min.

- 45

- 60

- 80

- 100

- 0.7

- 0.7

- 0.4

- 0.4

- 0.4

- 0.4

-1

30

15

- 1.5

-2

V

V

Typ.

Max.

Units

V

V

V

V

mA

mA

mA

mA

mA

mA

mA

I

CEO

I

CES

V

CE

= - 30V, I

B

= 0

V

CE

= - 60V, I

B

= 0

V

CE

= - 45V, V

BE

= 0

V

CE

= - 60V, V

BE

= 0

V

CE

= - 80V, V

BE

= 0

V

CE

= - 100V, V

BE

= 0

V

EB

= - 5V, I

C

= 0

V

CE

= - 4V, I

C

= - 0.3A

V

CE

= - 4V, I

C

= - 3A

I

C

= - 6A, I

B

= - 1A

V

CE

= - 4V, I

C

= - 6A

I

EBO

h

FE

V

CE

(sat)

V

BE

(on)

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

* Base-Emitter ON Voltage

* Pulse Test: PW =300碌s, duty Cycle =2% Pulsed

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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