鈥?/div>
Compact TO鈥?20 AB Package
MAXIMUM RATINGS
Rating
Symbol
V
CEO
V
CB
V
EB
I
C
I
B
BD243B
BD244B
80
80
BD243C
BD244C
100
100
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80鈥?00 VOLTS
65 WATTS
PD, POWER DISSIPATION (WATTS)
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Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
5.0
6
10
Collector Current 鈥?Continuous
Peak
Base Current
2.0
Total Device Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
Watts
W/_C
_C
65
0.52
Operating and Storage Junction
Temperature Range
T
J
, T
stg
鈥?5 to +150
CASE 221A鈥?6
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
1.92
_C/W
80
60
40
20
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (擄C)
140
160
Figure 1. Power Derating
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 9
Publication Order Number:
BD243B/D