BD241D, BD241E, BD241F
NPN SILICON POWER TRANSISTORS
Copyright 漏 1997, Power Innovations Limited, UK
SEPTEMBER 1981 - REVISED MARCH 1997
q
q
q
q
40 W at 25擄C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings
at 25擄C case temperature (unless otherwise noted)
RATING
BD241D
Collector-emitter voltage (R
BE
= 100
鈩?
BD241E
BD241F
BD241D
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25擄C case temperature (see Note 2)
Continuous device dissipation at (or below) 25擄C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
BD241E
BD241F
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
錕?frac12;LI
C
T
j
T
stg
T
L
2
SYMBOL
V
CER
VALUE
160
180
200
120
UNIT
V
V
CEO
140
160
5
3
5
1
40
2
32
-65 to +150
-65 to +150
250
V
V
A
A
A
W
W
mJ
擄C
擄C
擄C
This value applies for t
p
鈮?/div>
0.3 ms, duty cycle
鈮?/div>
10%.
Derate linearly to 150擄C case temperature at the rate of 0.32 W/擄C.
Derate linearly to 150擄C free air temperature at the rate of 16 mW/擄C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= 0.4 A, R
BE
= 100
鈩?
V
BE(off)
= 0, R
S
= 0.1
鈩?
V
CC
= 20 V.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1
2
3
4
5
6
