鈥?/div>
Compact TO鈥?20 AB Package
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦 脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦 脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦 脦
脦
脦
脦脦 脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦
脦脦脦
脦
脦
脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦 脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦
脦 脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦 脦
脦
脦
脦 脦
脦 脦
脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦
脦
脦 脦
脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦脦
MAXIMUM RATINGS
Rating
Symbol
VCEO
VCES
VEB
IC
IB
BD241C
BD242C
100
115
5.0
3.0
5.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
PD
40
0.32
Watts
W/_C
_C
TJ, Tstg
鈥?5 to +150
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JA
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
62.5
_C/W
_C/W
R
胃JC
3.125
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
漏
Semiconductor Components Industries, LLC, 2001
1
May, 2001 鈥?Rev. 3
Publication Order Number:
BD241C/D