鈥?/div>
Compact TO鈥?20 AB Package
BD241C*
PNP
BD242B
BD242C*
*Motorola Preferred Device
NPN
MAXIMUM RATINGS
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80, 100 VOLTS
40 WATTS
PD, POWER DISSIPATION (WATTS)
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Rating
Symbol
VCEO
VCES
VEB
IC
IB
BD242B
80
90
BD241C
BD242C
100
115
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
5.0
3.0
5.0
1.0
Collector Current 鈥?Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
PD
40
0.32
Watts
W/
_
C
TJ, Tstg
鈥?65 to + 150
_
C
CASE 221A鈥?9
TO鈥?20AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JA
Max
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
62.5
_
C/W
_
C/W
R
胃JC
3.125
40
30
20
10
0
0
20
40
60
80
100
120
140
160
TC, CASE TEMPERATURE (擄C)
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1