BD240/A/B/C
BD240/A/B/C
Medium Power Linear and Switching
Applications
鈥?Complement to BD239/A/B/C respectively
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
Collector-Base Voltage
: BD240
: BD240A
: BD240B
: BD240C
V
CER
Collector-Emitter Voltage
: BD240
: BD240A
: BD240B
: BD240C
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation ( T
C
=25擄C)
Junction Temperature
Storage Temperature
- 45
- 60
- 80
- 100
- 55
- 70
- 90
- 115
-5
-2
-4
- 0.6
30
150
- 65 ~ 150
V
V
V
V
V
V
V
V
V
A
A
A
W
擄C
擄C
Parameter
Value
Units
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD240
: BD240A
: BD240B
: BD240C
Collector Cut-off Current
Collector Cut-off Current
: BD240/A
: BD240B/C
: BD240
: BD240A
: BD240B
: BD240C
Test Condition
I
C
= - 30mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 0.3
- 0.3
- 0.2
- 0.2
- 0.2
- 0.2
-1
40
15
- 0.7
- 1.3
V
V
Typ.
Max.
Units
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
I
CEO
I
CES
V
CE
= - 30V, I
B
= 0
V
CE
= - 60V, I
B
= 0
V
CE
= - 45V, V
BE
= 0
V
CE
= - 60V, V
BE
= 0
V
CE
= - 80V, V
BE
= 0
V
CE
= - 100V, V
BE
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 4V,I
C
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
C
= - 1A , I
B
= - 0.2A
V
CE
= - 4V, I
C
= - 1A
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
* Pulse Test: PW=350碌s, duty Cycle鈮?.0% Pulsed
漏2000 Fairchild Semiconductor International
Rev. A, February 2000
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2
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