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BD180/D Datasheet

  • BD180/D

  • Plastic Medium Power Silicon PNP Transistor

  • 4頁

  • ETC

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*Pulse Test: Pulse Width
x
300
碌s,
Duty Cycle
x
2.0%.
鈥?/div>
DC Current Gain 鈥?h
FE
= 40 (Min) @ I
C
= 0.15 Adc
鈥?/div>
BD180 is complementary with BD179
Plastic Medium Power Silicon
PNP Transistor
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
ON Semiconductort
March, 2001 鈥?Rev. 9
漏
Semiconductor Components Industries, LLC, 2001
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Power Dissipation @ T
C
= 25_C
Derate above 25_C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Current鈥揋ain 鈥?Bandwidth Product
(I
C
= 250 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz)
Base鈥揈mitter On Voltage*
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(I
C
= 1.0 Adc, I
B
= 0.1 Adc)
DC Current Gain
(I
C
= 0.15 A, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
Collector鈥揈mitter Sustaining Voltage*
(I
C
= 0.1 Adc, I
B
= 0)
Characteristic
Rating
Characteristic
Symbol
Symbol
T
J
, T
stg
V
CBO
V
CEO
V
EBO
胃
JC
P
D
I
C
I
B
BD180
鈥?5 to +150
1
Value
4.16
Max
30
240
1.0
3.0
5.0
80
80
V
(BR)CEO
Symbol
V
CE(sat)
V
BE(on)
I
CBO
I
EBO
h
FE
f
T
Watts
mW/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
Min
3.0
40
15
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0 AMPERES
POWER TRANSISTOR
PNP SILICON
80 VOLTS
30 WATTS
Publication Order Number:
BD180/D
BD180
CASE 77鈥?9
TO鈥?25AA TYPE
Max
250
鈥?/div>
1.3
0.8
1.0
鈥?/div>
鈥?/div>
1.0
鈥?/div>
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
鈥?/div>

BD180/D相關(guān)型號PDF文件下載

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