BD176/178/180
BD176/178/180
Medium Power Linear and Switching
Applications
鈥?Complement to BD 175/177/179 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
*Collector-Base Voltage
Parameter
: BD176
: BD178
: BD180
: BD176
: BD178
: BD180
Value
- 45
- 60
- 80
- 45
- 60
- 80
-5
-3
-7
30
70
8.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
擄C/W
擄C/W
擄C
擄C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
C
P
C
R
胃ja
R
胃jc
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction to Ambient
Junction to Case
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD176
: BD178
: BD180
Collector Cut-off Current : BD176
: BD178
: BD180
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Test Condition
I
C
= - 100mA, I
B
= 0
Min.
- 45
- 60
- 80
- 100
- 100
- 100
-1
40
15
250
- 0.8
- 1.3
3
V
V
MHz
Typ.
Max.
Units
V
V
V
碌A
碌A
碌A
mA
I
CBO
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 80V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
I
C
= -1 A , I
B
= - 0.1A
V
CE
= - 2V, I
C
= -1 A
V
CE
= -10V, I
C
= - 250mA
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulsed
h
FE
Classificntion
Classification
h
FE1
* Classification 16: Only BD 176
漏2002 Fairchild Semiconductor Corporation
Rev. B1, October 2002
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
1
2
3
4
