BD175/177/179
BD175/177/179
Medium Power Linear and Switching
Applications
鈥?Complement to BD 176/178/180 respectively
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CBO
*Collector-Base Voltage
Parameter
: BD175
: BD177
: BD179
: BD175
: BD177
: BD179
Value
45
60
80
45
60
80
5
3
7
30
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
W
擄C
擄C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25擄C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BD175
: BD177
: BD179
Collector Cut-off Current
: BD175
: BD177
: BD179
Test Condition
I
C
= 100mA, I
B
= 0
Min.
45
60
80
100
100
100
1
40
15
250
0.8
1.3
3
V
V
MHz
Typ.
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
mA
I
CBO
V
CB
= 45V, I
E
= 0
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 2V, I
C
= 150mA
V
CE
= 2V, I
C
= 1A
I
C
= 1A, I
B
= 0.1A
V
CE
= 2V, I
C
= 1A
V
CE
= 10V, I
C
= 250mA
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
* Pulse Test: PW=300碌s, duty Cycle=1.5% Pulsed
h
FE
Classificntion
Classification
h
FE1
* Classification 16: Only BD175
6
40 ~ 100
10
63 ~ 160
16
100 ~ 250
漏2000 Fairchild Semiconductor International
Rev. A, February 2000