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鈥?/div>
DC Current Gain 鈥?hFE = 40 (Min) @ IC = 0.15 Adc
鈥?/div>
BD 165, 169 are complementary with BD 166, 168, 170
* Pulse Test: Pulse Width
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
Plastic Medium Power Silicon
NPN Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Current Gain鈥揃andwidth Product
(IC = 500 mAdc, VCE = 2 Vdc,
f = 1.0 MHz)
Base鈥揈mitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
Collector鈥揈mitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
DC current Gain
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A, VCE = 2 V)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Collector鈥揈mitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Characteristic
x
300
碌s,
Duty Cycle
x
2.0%.
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
PD
PD
IC
IB
Symbol
胃
JC
胃
JA
BD 165
BD 169
BD 165
BD 169
Type
VCE(sat)*
VBE(on)*
Symbol
BVCEO
ICBO
IEBO
hFE*
fT
鈥?65 to + 150
6.25
Max
100
Value
1.25
8
20
160
0.5
1.5
45
80
45
80
5
BD 165
BD 169
BD 165
BD 169
Type
Watts
mW/
_
C
Watt
mW/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
_
C
Min
6.0
40
15
45
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
20 WATTS
BD165
BD169
CASE 77鈥?8
TO鈥?25AA TYPE
0.95
Max
0.5
1.0
0.1
0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Order this document
by BD165/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD165相關(guān)型號(hào)PDF文件下載
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