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BD159/D Datasheet

  • BD159/D

  • Plastic Medium Power NPN Silicon Transistor

  • 44.98KB

  • 4頁

  • ETC

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鈥?/div>
Suitable for Transformerless, Line鈥揙perated Equipment
鈥?/div>
Thermopadt Construction Provides High Power Dissipation Rating for
. . . designed for power output stages for television, radio,
phonograph and other consumer product applications.
ON CHARACTERISTICS
OFF CHARACTERISTICS
Plastic Medium Power NPN
Silicon Transistor
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
ON Semiconductort
March, 2001 鈥?Rev. 2
漏
Semiconductor Components Industries, LLC, 2001
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(At rated voltage)
Collector鈥揈mitter Sustaining Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Base Current
Collector Current 鈥?Continuous
Peak
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
High Reliability
Characteristic
Rating
Characteristic
Symbol
Symbol
T
J
, T
stg
胃
JC
V
CEO
V
CB
V
EB
P
D
I
C
I
B
鈥?5 to +150
1
0.25
Max
20
0.16
375
350
6.25
Max
0.5
1.0
5.0
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
Watts
W/_C
_C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Unit
_C
Min
350
30
鈥?/div>
鈥?/div>
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
Publication Order Number:
BD159/D
BD159
CASE 77鈥?9
TO鈥?25AA TYPE
Max
240
100
100
鈥?/div>
碌A(chǔ)dc
碌A(chǔ)dc
Unit
Vdc
鈥?/div>

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