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BD139 Datasheet

  • BD139

  • POWER TRANSISTORS NPN SILICON

  • 104.14KB

  • 4頁(yè)

  • ONSEMI

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THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Characteristic
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
PD
PD
IC
IB
Symbol
胃
JC
胃
JA
BD 135
BD 137
BD 139
BD 135
BD 137
BD 139
Type
鈥?55 to + 150
Max
100
10
Value
12.5
100
1.25
10
45
60
100
0.5
1.5
45
60
80
5
CASE 77鈥?8
TO鈥?25AA TYPE
Watts
mW/
_
C
Watt
mW/
_
C
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
鈥?/div>
DC Current Gain 鈥?hFE = 40 (Min) @ IC = 0.15 Adc
鈥?/div>
BD 135, 137, 139 are complementary with BD 136, 138, 140
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
Plastic Medium Power Silicon
NPN Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
REV 7
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
10 WATTS
BD135
BD137
BD139
Order this document
by BD135/D
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_
C
1

BD139 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 1.5A

  • 80V

  • 500mV @ 50mA，500mA

  • -

  • 40 @ 150mA，2V

  • 1.25W

  • -

  • 通孔

  • TO-225AA，TO-126-3

  • TO225AA

  • 散裝

  • BD139OS

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