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BD135/D Datasheet

  • BD135/D

  • Plastic Medium Power Silicon NPN Transistor

  • 4頁

  • ETC

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MAXIMUM RATINGS
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Total Device Dissipation @ T
A
= 25_C
Derate above 25_C
Base Current
Collector Current
Emitter鈥揃ase Voltage
Collector鈥揃ase Voltage
Collector鈥揈mitter Voltage
Rating
Symbol
T
J
, T
stg
V
CBO
V
CEO
V
EBO
P
D
P
D
I
C
I
B
BD 135
BD 137
BD 139
BD 135
BD 137
BD 139
Type
鈥?5 to +150
Value
12.5
100
1.25
10
45
60
100
0.5
1.5
45
60
80
5
CASE 77鈥?9
TO鈥?25AA TYPE
Watts
mW/_C
Watt
mW/_C
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
h
FE
= 40 (Min) @ I
C
= 0.15 Adc
鈥?/div>
BD 135, 137, 139 are complementary with BD 136, 138, 140
鈥?/div>
DC Current Gain 鈥?/div>
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ON Semiconductort
March, 2001 鈥?Rev. 9
漏
Semiconductor Components Industries, LLC, 2001
1
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
10 WATTS
Publication Order Number:
BD135/D
BD135
BD137
BD139

BD135/D相關(guān)型號(hào)PDF文件下載

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