BCX19
BCX19
NPN Medium Power Transistor
鈥?This device is designed for general purpose amplifiers.
鈥?Sourced from process 38.
3
2
SOT-23
Marking: U1
1. Base 2. Emitter 3. Collector
1
Absolute Maximum Ratings
T
C
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
45
50
5.0
500
-55 ~ +150
Units
V
V
V
mW
擄C
Electrical Characteristics
T
C
=25擄C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 10mA, I
B
= 0
I
C
= 10碌A(chǔ), I
C
= 0
V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150擄C
V
EB
= 5.0V, I
C
= 0
I
C
= 100mA, V
CE
= 1.0V
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 1.0V
100
70
40
Min.
45
50
100
5.0
10
600
Typ.
Max.
Units
V
V
nA
碌A(chǔ)
碌A(chǔ)
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
CBO
I
EBO
h
FE
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ON CHARACTERISTICS
V
CE(sat)
V
BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.62
1.2
V
V
Thermal Characteristics
T
A
=25擄C unless otherwise noted
Symbol
P
D
R
胃JA
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Parameter
Max.
300
2.4
417
Units
mW
mW/擄C
擄C/W
漏2001 Fairchild Semiconductor Corporation
Rev. A, Octorber 2001
1
2
3
