鈥?/div>
Refer to KST2222 for graphs
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
Rating
50
45
5
100
350
150
Unit
V
V
V
mA
mW
擄C
1. Base 2. Emitter 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25擄C)
擄
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figures
Symbol
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
OB
NF
Test Conditions
I
C
=10碌A, I
E
=0
I
C
=2mA, I
B
=0
I
C
=2mA, V
EB
=0
I
E
=10碌A, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=5V, I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=50mA, I
B
=2.5mA
I
C
=2mA, V
CE
=5V
V
CE
=5V, I
C
=10mA
f=35MHz
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=5V, I
C
=2.0mA
R
G
=2K鈩? f=1KHz
Min
50
45
45
5
110
0.21
0.85
0.6
300
4
10
0.75
100
220
0.25
Typ
Max
Unit
V
V
V
V
nA
V
V
V
V
MHz
pF
dB
Rev. B
漏
1999 Fairchild Semiconductor Corporation
1
2
