MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BCW69LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR
3
1
BASE
BCW69LT1
BCW70LT1
3
1
2
EMITTER
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
VCEO
VEBO
IC
Value
鈥?5
鈥?.0
鈥?00
Unit
Vdc
Vdc
mAdc
CASE 318 鈥?08, STYLE 6
SOT鈥?23 (TO 鈥?236AB)
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board (1)
TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
胃JA
PD
556
300
2.4
R
胃JA
TJ, Tstg
417
鈥?55 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?.0 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?00
碌A(chǔ)dc,
VEB = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?0
碌A(chǔ)dc,
IC = 0)
Collector Cutoff Current
(VCB = 鈥?0 Vdc, IE = 0)
(VCB = 鈥?0 Vdc, IE = 0, TA = 100擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
鈥?/div>
鈥?/div>
鈥?00
鈥?0
nAdc
碌A(chǔ)dc
鈥?5
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Thermal Clad is a trademark of the Bergquist Company
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
漏
Motorola, Inc. 1996
1
BCW70LT1 產(chǎn)品屬性
3,000
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
100mA
45V
300mV @ 500µA，10mA
-
215 @ 2mA，5V
225mW
-
表面貼裝
TO-236-3，SC-59，SOT-23-3
SOT-23-3（TO-236）
帶卷 (TR)
BCW70LT1相關(guān)型號PDF文件下載
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