LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
BCW69LT1
BCW70LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
EBO
CASE 318鈥?8, STYLE 6
Value
鈥?45
鈥?5.0
鈥?100
Unit
Vdc
Vdc
mAdc
SOT鈥?3 (TO鈥?36AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR鈥?5 Board, (1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2,
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (I
C
= 鈥?.0 mAdc, I
B
= 0 )
Collector鈥揈mitter Breakdown Voltage (I
C
= 鈥?00
碌A(chǔ)dc,
V
EB
= 0 )
Emitter鈥揃ase Breakdown Voltage (I
E
= 鈥?0
碌A(chǔ)dc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 鈥?0 Vdc, I
E
= 0 )
(V
CE
= 鈥?0 Vdc, I
E
= 0 , T
A
= 100擄C)
1. FR鈥?5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CEO
鈥?/div>
鈥?/div>
鈥?100
鈥?10
nAdc
碌A(chǔ)dc
鈥?45
鈥?50
鈥?5.0
BCW69LT1相關(guān)型號(hào)PDF文件下載
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