ON Semiconductort
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Symbol
V
CEO
V
EBO
I
C
Value
鈥?5
鈥?.0
鈥?00
Unit
Vdc
Vdc
mAdc
BCW69LT1
BCW70LT1
3
1
2
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board
(1)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25擄C
Derate above 25擄C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
胃JA
P
D
556
300
2.4
R
胃JA
T
J
, T
stg
417
鈥?5 to +150
Unit
mW
mW/擄C
擄C/W
mW
mW/擄C
擄C/W
擄C
CASE 318鈥?8, STYLE 6
SOT鈥?3 (TO鈥?36AB)
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (I
C
= 鈥?.0 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage (I
C
= 鈥?00
碌Adc,
V
EB
= 0)
Emitter鈥揃ase Breakdown Voltage (I
E
= 鈥?0
碌Adc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 鈥?0 Vdc, I
E
= 0)
(V
CB
= 鈥?0 Vdc, I
E
= 0, T
A
= 100擄C)
1. FR鈥? = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
鈥?/div>
鈥?/div>
鈥?00
鈥?0
nAdc
碌Adc
鈥?5
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
漏
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 1
Publication Order Number:
BCW689LT1/D
BCW69LT1/D相關型號PDF文件下載
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型號
版本
描述
廠商
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